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SAMWIN
Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 60 V : 0.023ohm : 50 A : 30 nc : 130 W
SW50N06
General Description
This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. D
G S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG,TJ TL Drain to Source Voltage Continuous Drain Current (@Tc=25 ) Continuous Drain Current (@Tc=100 Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (@Tc=25 ) Derating Factor above 25 Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) ) (Note 1)
Parameter
Value
60 50 35 200 20 480 13 7 130 0.9 -55 ~ +150 300
Units
V A A A V mJ mJ V/ns W W/
Thermal Characteristics
Value Symbol
R R R
JC CS JA
Units Max
1.15 62.5 /W /W /W
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Min
-
Typ
0.5 -
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05.07.21
SAMWIN
Electrical Characteristics
Symbol Off Characteristics
BVDSS BVDSS/ Tj IDSS Drain- Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage Current IGSS Gate-Source Leakage Reverse V GS=0V,ID=250uA ID=250uA,referenced to 25 VDS=60V, VGS=0V VDS=48V, Tc=125 VGS=20V,VDS=0V VGS=-20V, VDS=0V (Tc=25 unless otherwise noted)
SW50N06
Value Test Conditions Min Typ Max Units
Parameter
60 -
0.07
-
V V/
-
-
1 100 -100
uA nA nA
On Characteristics
VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance VDS=VGS,ID=250uA VGS=10V,ID=25A 2.0 0.018 4.0 0.023 V ohm
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V,VDS=25V, f=1MHz 900 430 80 1220 550 100 pF
Dynamic Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) VDS=48V,VGS=10V, ID=50A (Note4,5) VDD=30V,ID=25A RG=50ohm (Note4,5) 40 100 90 80 30 9.6 10 60 200 180 160 40 nc ns
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr
Parameter
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction Diode in the MOSFET
Min.
-
Typ.
54 81
Max.
50 200 1.5 -
Unit.
A
IS=50A,VGS=0V IS=50A,VGS=0V, dIF/dt=100A/us
V ns uc
NOTES 1. Repeativity rating: pulse width limited by junction temperature 2. L=5.6mH,IAS=50A,VDD=25V,RG=0ohm, Starting TJ=25 3. ISD 50A,di/dt 300A/us,VDD BVDSS, Starting TJ=25 4. Pulse Test: Pulse Width 300us,Duty Cycle 2% 5. Essentially independent of operating temperature.
2/6
REV2.1
05.07.21
SAMWIN
10
2
SW50N06
10 ID,Drain Current [A]
2
VGS top: 15V 10V 8V 7V 6V 5.5V 5V bottom:4.5V
ID,Drain Current [A]
150 C
o
10
1
4.5V
10
1
25 C
o
Note: 1.VDS=50V
10 -1 10
0
10
0
10
1
10
0
2.250us pulse test.
2
3
4
5
6
7
8
9
10
Fig 1. On-State Characteristics
70 60 50 40
VGS=10V
VDS,Drain-to-Source voltage [V]
VGS, Gate-Source Voltage [V]
Fig 2. Transfer Characteristics
Drain-Source On-Resistance[mohm]
ISD,Reverse Drain Current[A]
10
2
RDS(ON)
30 20 10 0 0 20 40 60 80 100 120 140 160 180 200
VGS=20V
10
1
150
25
Note: 1.vGS=0v
10 0.2
0
2.250us test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD,Source-Drain Voltage[V]
Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage
3000
Ciss = Cgs+Cgd(Cds=shorted)
Fig 4. On State Current vs. Allowable Case Temperature
12
2500
Coss= Cds+Cgd Crss = Cgd
VGS,Gate-to-Source Voltage [V]
10 8
VDS=48V
Capacitance [pF]
2000 1500 1000 500 0
Ciss
Note: 1.VGS=0V 2.f=1MHz.
Coss
VDS=30V
6 4 2 0
Crss
Note:ID=50A
0 5 10 15 20 25 30 35 40 45
5
10
15
20
25
30
35
VDC,Drain-Source Voltage [V]
QG,Total Gate Charge [nC]
Fig 5. Capacitance Characteristics (Non-Repetitive)
3/6
Fig 6. Gate Charge Characteristics
REV2.1
05.07.21
SAMWIN
1.2
SW50N06
3.0 2.5
Drain-Source On-Resistance
Drain-Source Breakdown Voltage
1.1
RDs(on) (Normalized)
BVDSS [Normalized]
2.0 1.5 1.0
Note:
1.0
0.9
Note: 1.VGS=0V 2.ID=250uA
0.5 0.0
200
1.VGS=10V 2.ID=25A
0.8 -100
-50
0
50
100
o
150
-50
0
50
100
o
150
TJ,Junction Temperature [ C]
TJ,Junction Temperature[ C]
Fig 7. Breakdown Voltage Variation vs. Junction Temperature
Fig 8. On-Resistance Variation vs. Junction Temperature
50
10 10 10 10
3
Operation In This Area Limted By RDS(ON) 100us
2
40
ID , Drain Current[A]
2
ID, Drain Current[A]
1
1ms 10ms DC
30
20
0
Note: 1.Tc=25 C 2.Tj=150 C
0 1
10
10 -1 10
-1 3.Single Pulse
VD,Drain-Source Voltage[V]
10
10
10
0 25
50
75
100
o
125
150
Tc,Case Temperature [ C]
Fig9. Maximum Safe Operating
Fig 10. Maximum Drain Current Vs. Case Temperature
(t),Thermal Response
10
0
D = 0 .5 0 .2 0 .1
10
JC
-1
0 .0 5 0 .0 2 0 .0 1
S IN G L E P U L S E
Z
N o te : o 1 .Z J C (t)= 1 .4 2 C /w M a x 2 .D u ty F a c to r ,D = t1 /t2 3 .T j-T c = P D M * Z J C (t)
-5
10
-2
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 ,S q u a r e W a v e P u l s e D u r a t io n ( s e c )
Fig 11. Transient Thermal Response Curve
4/6
REV2.1
05.07.21
SAMWIN
Same Type as DUT
300nF
SW50N06
VGS
10V
200nF
50K
Qg Qgs Qgd
VDS
VGS
DUT
1mA
Charge
Fig 12. Gate Charge test Circuit & Waveforms
RL VDS
VDD (0.5 rated VDS)
VDS
90%
10V
Pulse Generator
RG
DUT
Vin
10% tf
td(off)
td(on) tr ton
toff
Fig 13. Switching test Circuit & Waveforms
L VDS VDD BVDSS RG DUT 10V IAS VDD
1 BVDSS EAS= --- LLIAS2--------------2 BVDSS-VDD
ID(t)
VDS(t)
tp
Time
Fig 14. Unclamped Inductive Switching test Circuit & Waveforms
5/6
REV2.1
05.07.21
SAMWIN
DUT
SW50N06
+
VDS
__
L
Driver RG Same Type as DUT VDD
VGS Is controlled by pulse period
VGS (Driver)
Gate Pulse Width D = --------------------------Gate Pulse Period
10V
IFM,Body Diode Forward Current IS (DUT) IRM Body Diode Reverse Current VDS (DUT) Vf di/dt
Body Diode Recovery dv/dt VDD
Body Diode Forward Voltage Drop Fig 15. Peak Diode Recovery dv/dt test Circuit & Waveforms
6/6
REV2.1
05.07.21

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